PART |
Description |
Maker |
K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
K4H561638H-UI/PB0 K4H561638H-UI/PB3 K4H561638H-UI/ |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate (DDR) SDRAM
|
Micron Technology
|
HYMD132G725B8M-H HYMD132G725B8M-K HYMD132G725B8M-L |
DDR SDRAM - Registered DIMM 256MB SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC Low Profile Registered DDR SDRAM DIMM
|
Hynix Semiconductor
|
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank 2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM DDRSDRAMSpecificationVersion0.3 DDR SDRAM Specification Version 0.3
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EBD25UC8AMFA-6B EBD25UC8AMFA |
256MB Unbuffered DDR SDRAM DIMM 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184
|
ELPIDA MEMORY INC
|
HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|